| PART |
Description |
Maker |
| SDR8200S8 SDR8200S10 SDR8200S12 SDR8200S4 SDR8200S |
200 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDA188DECAUF SDA188DECAUFS SDA188DECAUFTX SDA188DE |
50 Amps Centertap Ultra Fast Rectifier Assembly 400 - 900 Volts
50 A, 400 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
http://
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| SFT6033 SFT6032 |
50 AMPS 90 - 120 Volts High Power NPN Transistors
|
SSDI[Solid States Devices, Inc]
|
| MTW24N40E-D |
Power MOSFET 24 Amps, 400 Volts N-Channel TO-247
|
ON Semiconductor
|
| 1N3879 1N3883 1N3882 1N3880 1N3881 RF0003A RF0003A |
6 AMPS 50-400 VOLTS 120 nsec FAST RECOVERY RECTIFIER
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SFS2540 SFS2510 SFS2520 SFS2525 SFS2530 |
25 AMPS 100 ─ 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
25 AMPS 100 Α 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR1004F SDR1010F SDR1008F SDR1006F |
100 AMPS, 400-1000 VOLTS 270 nsec FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| CS55BZ CS55DZ |
Leaded Thyristor SCR
SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
|
CENTRAL[Central Semiconductor Corp]
|
| MJW16110 MJ16110 ON1988 |
POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors
|
Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| SFS2326 SFS2328 SFS2329 |
1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-5
|
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
| UMIL100A |
UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 100; P(in) (W): 16; Gain (dB): 8; Vcc (V): 28; Cob (pF): 120; fO (MHz): 0; Case Style: 55JU-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
100 Watts / 28 Volts / Class AB Defcom 225 - 400 MHz
100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz
|
Microsemi, Corp.
Electronic Theatre Controls, Inc.
ETC
GHZTECH[GHz Technology]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
